MRF342 n
n e
itaxial
lanar ty
e rf
ower transistor ? 2
14 american microsemiconductor, inc. specifications are subject to change without notice. aerospace mgmt. sys. cert . as/en/jisq9100:2009 rev. c iso9001:2008 cert no. 45325 133 kings road, madison, new jersey 07940 united states of america tel. 1 - 9-3 - 3-- - 9566, fax. 1 - 9-3 - 3-- - 3
-8 www.americanmicrosemi.com document page 1 of 1 3 revised 01/2014 description : the MRF342 is a silicon n
n epitax ia l planar transistor designed for rf power amplifiers on v hf band mobile radio applications . the american microsemiconductor MRF342 is designed for vhf amplifier applications operating to 150 mhz package style to - 220ab 1 = base 2 = emitter 3 = collector 4 = emitter maximum ratings i c 3.0 a v ceo 35 v v cbo 65 v v ebo 4.0 v p diss 55 w @ t c = 25 ? t j - 55 ? to +150 ? t stg - 55 ? to +150 ? jc 3.2 ?/w characteristics t c = 25 ? symbol test conditions minimum typical maximu m units bv ceo i c = 20 ma 35 v bv ces i c = 20 ma 65 v bv cbo i c = 20 ma 65 v bv ebo i e = 2.0 ma 4.0 v i ces v ce = 27 v 2.0 ma h fe v ce = 5.0 v i c = 1.0 a 10 100 --- c ob v cb = 27 v f = 1.0 mhz 20 30 pf g pe v cc = 13.5 v p out = 6.0 w f = 136 mhz 10 11.5 db g pe c v cc = 27 v p out = 24 w f = 136 mhz 11 50 12.3 60 db %
MRF342 n
n silicon epitaxial transistor ? 2
14 american microsemiconductor, inc. specifications are subject to change without notice. aerospace mgmt. sys. cert . as/en/jisq9100:2009 rev. c iso9001:2008 cert no. 45325 133 kings road, madison, new jersey 07940 united states of america tel. 1 - 9-3 - 3-- - 9566, fax. 1 - 9-3 - 3-- - 3
-8 www.americanmicrosemi.com document page 1 of 2 revised 01/2014 * emc g
een molding compound is halogen - f-ee. **fo- lead f-ee plating, add suffix lead f
ee to pa-t numbe-. fo- tin/lead plating, add suffix tin/lead to pa-t numbe-. no suffix designation allows fo- the supply of eithe- lead - f-ee o- tin/lead plated p-oduct depending on availability.
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